Munich, Germany, June 22, 2018 – Infineon Technologies Bipolar GmbH & Co. KG introduces a new line of diodes designed for modern IGBT applications: Infineon Prime Soft. The diode has improved turn-off capability and shutdown speeds of up to 5 kA/μs. Prime Soft is based on the highly acclaimed IGCT freewheeling diode family based on a single silicon chip design. Typical applications for this diode are HVDC/FACT and medium voltage drive devices using voltage source converters, which are characterized by high power loss requirements.
Customers with the new Prime Soft diodes will benefit from industry-leading low conduction losses. This is achieved by a single silicon chip design that increases the effective silicon area by more than 25% compared to multi-chip diodes. This new design increases the switching power up to 6-10 MW at a maximum junction temperature of 140 °C. The thermal resistance of this new fusion splice device is reduced by approximately 20% compared to a free floating crimp package without a strong metal splicing between the silicon and molybdenum carriers.
In addition to high reliability and good thermal performance, Infineon Prime Soft diodes have minimal switching losses. Its soft reverse recovery performance does not undue oscillation under all relevant conditions. In addition to electrical parameters, the new mechanical concept simplifies stacking press assembly by series laminating component IGBTs and freewheeling diodes. This laminated assembly design reduces the time required for assembly by approximately 50%.
Supply
The press-fit super-soft IGBT freewheeling diode has a 4.5 kV blocking voltage. The diode is available in three different package diameters: D1600U45X122, D2700U45X122 and D4600U45X172.
The single silicon chip design of the Infineon Prime Soft diode increases the effective silicon area and increases by more than 25% compared to multi-chip diodes. This new design increases the switching power to 6-10 MW at the highest junction temperature of 140 °C.
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