Recently, Vishay Intertechnology, Inc. (NYSE: VSH) announced the launch of two new 100V N-channel TrenchFET power MOSFETs - SiR870DP and Si4190DY. The SiR870DP and Si4190DY use Vishay 's new ThunderFETTM technology to deliver the industry's lowest on-resistance in a 100V MOSFET with 4.5V. In addition, the device's on-resistance and gate charge multipliers are among the best in its class, which is a measure of the figure of merit (FOM) of MOSFET performance in DC/DC converter applications.
The 7.8m? on-resistance of the SiR870DP at 4.5V is the lowest in the industry. The on-resistance of this MOSFET at 10V is also very low, only 6m?. For designers, lower device on-resistance means lower conduction losses while also reducing power consumption in energy-efficient green products.
The SiR870DP features FOM down to 208 mΩ-nC at 4.5V, reducing conduction and switching losses in higher frequency and switching applications. For designers using SO-8 packages, the Si4190DY has 8.4m? and 12m? at 10V and 4.5V, and 340mΩ-nC and 220mΩ-nC at 10V and 4.5V, respectively. , have reached the best level in the industry.
The devices released today are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supplies for brick power and bus converter applications for telecommunications. These MOSFETs can be turned on at 4.5V, so various PWM and gate drive ICs are available as an option for designers. The use of a 5V rated IC not only reduces gate drive losses, but also simplifies the overall power supply design by eliminating the need for a separate 12V supply rail.
The SiR870DP and Si4190DY have been tested with 100% Rg and UIS. The MOSFET complies with the halogen-free regulations of IEC 61249-2-21 and is compliant with RoHS Directive 2002/95/EC.
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